Diramics presents InP pHEMT MMIC LNA prototypes

Diramics has been offering discrete bare die InP pHEMT transistors for ultra low noise hybrid LNAs. These transistors have been used in cutting edge applications from room temperature all the way to 4K. We are proud to announce that we have advanced the development of an MMIC process based on our transistor technology to a point where we can present first results from our current prototypes.
The plots below give some preview into the performance of the 5 MMIC LNAs designed and fabricated by Diramics. The circuits cover frequency bands ranging from 12 to 86 GHz, and the process is even suitable to cover the full W-band. All designs were optimized for room temperature but operation at cryogenic temperatures is possible.
At the moment we do have a small number of LNAs available, so please contact us if you are interested in testing and evaluating any of our MMIC LNAs.
In addition to our own designs we also fabricated custom MMICs designed by external partners in expectation of the PDK we will offer to allow customers to design their own circuits. This service will follow shortly after the official introduction of the MMIC LNA products.