Discrete InP pHEMTs – pH-100
Based on the technology with lowest noise commercially available, our individual InP based pHEMTs offer the best solution for your hybrid LNA needs. The biggest advantage of using our technology can be seen for cryogenic applications. However, our transistors also excel at room temperature.
With our accurate small-signal and noise models, designing your hybrid LNA is as easy and fast as never before.
With our accurate small-signal and noise models, designing your hybrid LNA is as easy and fast as never before. Get access to a model library for Keysight ADS by pressing this button:
The general datasheet as well as the datasheets for the most common transistor sizes can be downloaded from the table blow.
| Type | # Fingers | Finger Width | Total Width | Data Sheet | |
|---|---|---|---|---|---|
| pH-100 | 2/4/6 | 10-150 µm |  |
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| pH-100-2F25 | 2 | 25 µm | 50 µm | |
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| pH-100-2F50 | 2 | 50 µm | 100 µm | |
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| pH-100-2F75 | 2 | 75 µm | 150 µm | |
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| pH-100-2F100 | 2 | 100 µm | 200 µm | |
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| pH-100-4F20 | 4 | 20 µm | 80 µm | |
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| pH-100-4F37.5 | 4 | 37.5 µm | 150 µm | |
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| pH-100-4F50 | 4 | 50 µm | 200 µm | |
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| pH-100-4F62.5 | 4 | 62.5 µm | 250 µm | |
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| pH-100-6F66.7 | 6 | 66.7 µm | 400 µm | |
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| Available Dimensions for the pH-100 Technology |
|---|
| Gate Length: | 100 nm |
| Finger Width: | 10 μm – 150 μm |
| Number of Fingers: | 2 / 4 / 6 |
| Basic Characteristics of a 4 x 20 μm Device (incl. bond-/probe- pads) |
|---|
| 300 K | 15 K | |
|---|---|---|
| fT: | 220 GHz | 235 GHz |
| fMAX: | 550 GHz | 800 GHz |
| gm: | 1250 mS/mm | 1500 mS/mm |
| NFmin (@30GHz) | 0.6 dB | 0.08 dB |
| Tmin (@30GHz) | 43 K | 5 K |
To see examples of results achieved with complete modules using the pH-100 technology visit our reference page.
For more information or a quote, please fill out the contact form or send us an email.